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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
300 pcs
|
300 pcs | On Request | 1 | On Request | On Request | 621 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Base Current | |
| Base-Emitter Voltage @ Ic=6A, Vce=3V | |
| Collector Current - Peak | |
| Collector Cut-off Current ICEO @ VCE=40V | |
| Collector-Base Voltage | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Diode Forward Voltage | |
| Emitter Cut-off Current IEBO @ VEB=5V | |
| Emitter-Base Voltage | |
| Industrial Grade | |
| Mounting Type | |
| Operating Junction Temperature | |
| Operating Temperature | |
| Power | |
| Storage Temperature | |
| Storage Temperature Range | |
| Supplier Device Package | |
| Thermal Resistance Junction-Case | |
| Transistor Type | |
| Turn Off Time | |
| Turn On Time | |
| Vce Sat (Maximum @ Ic=6 A, Ib=12 mA) | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage | |
| hfe (Minimum @ Ic=15 A, Vce=3 V) | |
| hfe (Minimum/Maximum @ Ic=6 A, Vce=3 V) | |
| icbo (Maximum @ VCB=100 V) | |
| icbo (Maximum @ VCB=100 V, Tc=150 °C) |
The BDW83C is a silicon epitaxial-base NPN power monolithic Darlington transistor from STMicroelectronics. It is designed for use in linear and switching industrial equipment, offering a high DC current gain (hFE) ranging from 750 to 20000 at 6A collector current.
Key electrical characteristics include a collector-emitter voltage rating of 100V, continuous collector current of 15A (40A peak), and a total power dissipation of 130W at case temperature 25°C. The device has fast switching speeds with typical turn-on time of 0.9µs and turn-off time of 6µs.
The transistor is mounted in a JEDEC TO-218 (TO-247-3) plastic through-hole package, making it suitable for power applications requiring high current handling. It has an operating junction temperature range of up to 150°C and a storage temperature range of -65 to 150°C. The complementary PNP type is BDW84C.
| Qty | Low | High |
|---|---|---|
| 600+ | $1.51 | $1.51 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The BDW83C is an NPN Darlington transistor from STMicroelectronics.
The maximum collector-emitter voltage (VCEO) is 100 V.
The maximum continuous collector current is 15 A, with a peak rating of 40 A.
The BDW83C is in a TO-247-3 through-hole package.
The total power dissipation is 130 W at case temperature 25°C.
RoHS compliance is indicated as RoHS3 Compliant, but this is unverified and considered low confidence.
The maximum operating junction temperature is 150°C, and the storage temperature range is -65 to 150°C.