| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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14 pcs
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14 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BDW51C from STMicroelectronics is a silicon power transistor designed as a Bipolar NPN Device. It is housed in a hermetically sealed TO-3 metal package.
Key electrical specifications include a maximum collector-emitter voltage (VCEO) of 100V and a maximum collector current (IC) of 15A. These characteristics make it suitable for various power switching and amplification applications.
The device is designed for complementary use with PNP transistors such as the BDW54 series. Its TO-3 packaging is typical for power applications requiring robust thermal management.
Environmental compliance includes RoHS3 compliance, an MSL of 1, and REACH unaffected status.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.93 | $1.93 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the BDW51C is 100V.
The maximum collector current (IC) for the BDW51C is 15A.
The BDW51C is supplied in a TO-3 metal package.
Yes, the BDW51C is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the BDW51C is 1 Unlimited.