DistyParts Icon
BDW47G BDW47G is a PNP Darlington silicon power transistor from ON Semiconductor. It features 100V collector-emitter breakdown voltage, 15A collector current, and 85W power dissipation in a TO-220 package.
Mfr Part #:

BDW47G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
BDW47G is a PNP Darlington silicon power transistor from ON Semiconductor. It features 100V collector-emitter breakdown voltage, 15A collector current, and 85W power dissipation in a TO-220 package.
✓ Total Stock: 68 pcs

BDW47G Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Flip Electronics ✓
Non-Authorised Inventory information
68 pcs
On Request
68 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

BDW47G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Industrial Grade
Medical Grade
Military Grade
Mounting Type
Operating Temperature
Power
Storage Temperature
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
View Similar Products (0)

BDW47G Description

Short technical summary and product information.

The BDW47G is a PNP Darlington silicon power transistor manufactured by ON Semiconductor. It is designed for general purpose and low speed switching applications. This device offers a collector-emitter breakdown voltage (VCEO) of 100V and a continuous collector current rating of 15A. The DC current gain (hFE) is a minimum of 1000 at 5A collector current and 4V VCE, and a minimum of 250 at 10A and 4V. The collector-emitter saturation voltage is a maximum of 2V at 5A and 3V at 10A. Power dissipation is rated at 85W at a case temperature of 25°C, with a junction-to-case thermal resistance of 1.47°C/W. The operating junction temperature range is -55°C to 150°C.

 

The transistor features monolithic construction with built-in base-emitter shunt resistors, enhancing stability and reducing external component count. It is suitable for applications such as power switching, motor control, and relay drivers.

 

The BDW47G is housed in a standard TO-220-3 through-hole package, which allows for easy mounting on heatsinks. The device is Pb-Free and RoHS compliant, meeting environmental standards. The standard package quantity is 50 units per rail.

BDW47G Quick Information

Product Type: PNP Darlington Transistor
Canonical Name: BDW47G PNP Darlington Silicon Power Transistor
Subcategory: Single

BDW47G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

BDW47G Features

  • PNP Darlington transistor with high DC current gain.
  • Collector-emitter breakdown voltage of 100V.
  • Continuous collector current rating of 15A.
  • Power dissipation of 85W in TO-220 package.
  • RoHS compliant and Pb-Free.

BDW47G Applications

  • General purpose low speed switching applications.
  • Power switching and motor control circuits.
  • Relay and solenoid driver circuits.
  • Output stages in audio amplifiers.

BDW47G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the transistor type of BDW47G?

PNP Darlington.

What is the collector-emitter breakdown voltage (VCEO) of BDW47G?

100V minimum at 30 mA.

What is the maximum collector current rating?

15A continuous.

What is the power dissipation of BDW47G?

85W at case temperature 25°C.

What is the operating temperature range?

-55°C to 150°C junction temperature.

What package is the BDW47G available in?

TO-220-3 through-hole package.

Is the BDW47G RoHS compliant?

Yes, RoHS compliant and Pb-Free.

Home
Account

Categories