BDW47 BDW47 is a PNP Darlington power transistor from ON Semiconductor. It features a 100V collector-emitter voltage, 15A collector current, and high DC current gain of 1000 minimum.
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BDW47

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
BDW47 is a PNP Darlington power transistor from ON Semiconductor. It features a 100V collector-emitter voltage, 15A collector current, and high DC current gain of 1000 minimum.
Total Stock: 3,222 pcs

BDW47 Available from 1 distributor

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BDW47 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Base Current
Base-Emitter On Voltage
Collector Cutoff Current (Maximum @ VCE = 50 V, IB = 0)
Collector Cutoff Current (Maximum @ Vcb=100 V, Ie=0)
Collector-Base Voltage
Collector-Emitter Sustaining Voltage
Current
DC Current Gain (Minimum @ Ic=10 A, Vce=4 V)
DC Current Gain (Minimum/Typical @ Ic=5 A, Vce=4 V)
DC Current Gain (hFE) (Min) @ Ic, Vce
Emitter Cutoff Current
Emitter-Base Voltage
Frequency
Lead Style
Mounting Type
Operating Temperature
Operating and Storage Junction Temperature Range
Power
Standard Package Qty
Storage Temperature
Supplier Device Package
Tape & Reel
Termination Style
Thermal Resistance - Junction to Case
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Vce Saturation (Maximum @ Ic=10 A, Ib=50 mA)
Vce Saturation (Maximum @ Ic=5 A, Ib=10 mA)
Voltage

BDW47 Description

Short technical summary and product information.

The BDW47 is a PNP Darlington silicon power transistor manufactured by ON Semiconductor. It is designed for general purpose and low speed switching applications. Key electrical characteristics include a maximum collector-emitter voltage of 100V, a maximum collector current of 15A, and a minimum DC current gain of 1000 at 5A, 4V. The device features a low collector-emitter saturation voltage of 3V maximum at 10A. The transistor is housed in a TO-220-3 through-hole package, suitable for easy mounting on heatsinks. The operating junction temperature range is -55°C to 150°C, and the maximum power dissipation is 85W. The device is Pb-Free and RoHS compliant.

BDW47 Quick Information

Product Type: PNP Darlington Power Transistor
Series: BDW47
Canonical Name: BDW47 PNP Darlington Silicon Power Transistor
Subcategory: Darlington Transistor

BDW47 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

BDW47 Features

  • High DC current gain of 1000 minimum at 5A.
  • Low collector-emitter saturation voltage of 3V at 10A.
  • TO-220 through-hole package for easy mounting.
  • Pb-Free and RoHS compliant.
  • Operating temperature range -55°C to 150°C.

BDW47 Applications

  • Designed for general purpose switching applications.
  • Suitable for low speed switching circuits.

BDW47 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the collector-emitter voltage rating?

The maximum collector-emitter voltage is 100V.

What package is the BDW47 available in?

The BDW47 is available in a TO-220-3 through-hole package.

What is the operating temperature range?

The operating junction temperature range is -55°C to 150°C.

Is the BDW47 RoHS compliant?

Yes, the BDW47 is RoHS3 compliant and Pb-Free.

What is the DC current gain?

The minimum DC current gain is 1000 at 5A, 4V, with a typical value of 2500.

What is the maximum collector current?

The maximum collector current is 15A.

What is the power dissipation?

The maximum power dissipation is 85W.

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