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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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49 pcs
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49 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | |
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| Tape & Reel | |
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| Voltage |
The BDW46G is a PNP Darlington power transistor from On Semiconductor, designed for general purpose and low-speed switching applications. It features a collector-emitter voltage (VCEO) of 80V minimum and a continuous collector current rating of 15A. The device offers high DC current gain with a minimum hFE of 1000 at 5A and 4V, typical 2500, and low collector-emitter saturation voltage of 3V maximum at 10A. Built-in base-emitter shunt resistors reduce external component count. The transistor is housed in a TO-220-3 through-hole package and can dissipate up to 85W at case temperature 25°C. It operates over a junction temperature range of -55°C to 150°C. The BDW46G is complementary to the NPN BDW42G, enabling push-pull configurations. The device is Pb-Free and RoHS compliant per the datasheet.
80V maximum (VCEO(sus) min 80V).
TO-220-3 (through-hole).
-55°C to 150°C (junction).
Yes, it is stated as RoHS compliant and Pb-Free.
Minimum 1000 at 5A, 4V; typical 2500.
15A.
85W at case temperature 25°C.