| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
23 pcs
|
23 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Industrial Grade | |
| Junction Temperature | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| Storage Temperature | |
| Tape & Reel | |
| Turn Off Time | |
| Turn On Time |
The Thomson-CSF BDV67 is a silicon NPN power transistor belonging to the Darlington family. It is designed for use in audio output stages, general amplifier, and switching applications.
Key electrical characteristics include a maximum collector current of 16A and a peak collector current of 20A. The device offers a high DC current gain, with values up to 3000 at 1A and 1000 at 10A and 16A. It has a maximum collector power dissipation of 200W at 25°C.
The transistor is housed in a TO-3PN package, suitable for through-hole mounting. Its complementary type is the BDV66 series. The operating junction temperature ranges from -65°C to 150°C, and storage temperature is also within this range.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.93 | $1.93 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector current (IC) for the BDV67 transistor is 16A.
The maximum power dissipation (PC) for the BDV67 transistor is 200W at 25°C.
The BDV67 transistor is supplied in a TO-3PN package.
The typical DC current gain (hFE) of the BDV67 at 1A collector current is 3000.
The operating junction temperature (Tj) for the BDV67 transistor is 150°C, and the storage temperature (Tstg) ranges from -65°C to 150°C.