SP3232EEA-L/TR
Exar
The Exar SP3232EEA-L/TR is a 2-driver/2-receiver RS-232 transceiver designed for portable applications. It operates from a 3.0V to 5.5V supply.
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1 pcs
|
1 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Mounting Type | |
| Storage Temperature |
The BDV65C is an NPN Silicon Power Darlington Transistor manufactured by NXP Semiconductors. It is designed for complementary use with the BDV64, BDV64A, BDV64B, and BDV64C series.
Key electrical specifications include a maximum collector-emitter voltage (VCEO) of 120V and a maximum collector-base voltage (VCBO) of 120V. The continuous collector current (IC) is rated at 12A, with a peak collector current (ICM) of 15A. The device offers a minimum forward current transfer ratio (hFE) of 1000 at 4V and 5A.
Thermal characteristics include a continuous device dissipation of 125W at 25°C case temperature and 3.5W at 25°C free air temperature. The operating and storage temperature range is from -65°C to +150°C.
The BDV65C is housed in a SOT-93 package, suitable for through-hole mounting. Its robust design makes it suitable for power switching and amplification applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.26 | $1.26 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the BDV65C is 120V.
The BDV65C has a continuous collector current (IC) rating of 12A.
The minimum forward current transfer ratio (hFE) for the BDV65C is 1000 at 4V and 5A.
The BDV65C is supplied in a SOT-93 package.
The operating junction temperature range for the BDV65C is -65°C to +150°C.
The continuous device dissipation at 25°C case temperature for the BDV65C is 125W.
