| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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78 pcs
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78 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BDV65BG is an NPN Darlington transistor from onsemi, designed for high-current switching and amplification applications. It features a collector-emitter sustaining voltage (VCEO(sus)) of 100V minimum and a continuous collector current rating of 10A, with peak current capability up to 20A. The device offers a minimum DC current gain (hFE) of 1000 at 5A and 4V, ensuring high gain performance.
With a total power dissipation of 125W at case temperature 25°C, the transistor incorporates a thermal resistance junction-to-case of 1.0°C/W and a power derating factor of 1.0W/°C. The BDV65BG is housed in a TO-247-3 package (also known as SOT-93 or TO-218) with through-hole mounting.
This transistor is suitable for use as an output device in complementary general-purpose amplifier applications, as noted in the datasheet. It is lead-free (Pb-Free) and RoHS compliant according to the manufacturer.
The BDV65BG has a minimum collector-emitter sustaining voltage (VCEO(sus)) of 100V.
The BDV65BG is housed in a TO-247-3 (also known as SOT-93 or TO-218) through-hole package.
The operating junction temperature range is -65°C to 150°C.
Yes, the BDV65BG is RoHS3 compliant and lead-free, as verified by the manufacturer datasheet.
The minimum hFE is 1000 at a collector current of 5A and VCE of 4V.
The maximum VCE(sat) is 2V at a base current of 20mA and collector current of 5A.
The maximum junction-to-case thermal resistance (RθJC) is 1.0°C/W.