BDV64BG PNP Darlington transistor from ON Semiconductor. Rated for 100V collector-emitter voltage, 10A collector current, and 125W power dissipation in a TO-247-3 through-hole package.
Mfr Part #:

BDV64BG

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
PNP Darlington transistor from ON Semiconductor. Rated for 100V collector-emitter voltage, 10A collector current, and 125W power dissipation in a TO-247-3 through-hole package.
Total Stock: 338 pcs
$ Price Range: $1.62 - $4.13

BDV64BG Available from 2 distributors

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Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
285 pcs
285 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
53 pcs
53 pcs On Request 1 On Request On Request On Request On Request On Request

BDV64BG Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Base Current (IB)
Collector Cutoff Current (ICEO)
Collector-Base Voltage (VCB)
Collector-Emitter Sustaining Voltage (VCEO(sus))
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Emitter-Base Voltage (VEB)
Mounting Type
Operating Temperature
Power
Storage Temperature
Supplier Device Package
Tape & Reel
Thermal Resistance Junction-to-Case (RθJC)
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

BDV64BG Description

Short technical summary and product information.

The BDV64BG is a PNP Darlington power transistor manufactured by ON Semiconductor. It is designed for use as an output device in complementary general-purpose amplifier applications. The device features a high DC current gain (hFE) of 1000 minimum at 5A collector current and 4V VCE, making it suitable for high-gain switching and linear amplification. The transistor is rated for a maximum collector-emitter voltage (VCEO) of 100V, continuous collector current of 10A (20A peak), and a power dissipation of 125W at case temperature 25°C. It has a low collector-emitter saturation voltage of 2V maximum at 5A/20mA base current. The device is housed in a TO-247-3 package (also known as SOT-93) and is through-hole mountable. The junction-to-case thermal resistance is 1.0°C/W. The BDV64BG is lead-free (Pb-Free) and RoHS compliant. It is the PNP complement to the NPN BDV65B. The operating junction temperature range is -65°C to 150°C.

BDV64BG Quick Information

Product Type: Darlington Transistor
Series: BDV64B
Canonical Name: BDV64BG PNP Darlington Transistor
Subcategory: Darlington Power Transistor

BDV64BG Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

BDV64BG Estimated Pricing

Qty Low High
1+ $4.13 $4.13
10+ $2.28 $2.28
120+ $1.86 $1.86
570+ $1.62 $1.62

Estimated market price range - modelled values for guidance only, not live distributor offers.

BDV64BG Features

  • PNP Darlington transistor with high DC current gain.
  • Rated for 100V collector-emitter voltage.
  • Continuous collector current up to 10A.
  • Power dissipation of 125W at 25°C case.
  • Lead-free and RoHS compliant.

BDV64BG Applications

  • Output devices in complementary amplifier applications.
  • High-current switching circuits.
  • General-purpose power amplification.
  • Motor control and power regulation.

BDV64BG FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage of the BDV64BG?

The maximum collector-emitter voltage (VCEO) is 100V.

What package does the BDV64BG come in?

The BDV64BG is available in a TO-247-3 (SOT-93) through-hole package.

What is the operating temperature range of the BDV64BG?

The operating junction temperature range is -65°C to 150°C.

Is the BDV64BG RoHS compliant?

The BDV64BG is listed as RoHS3 compliant, but this information is unverified. The datasheet states it is a Pb-Free device.

What is the DC current gain (hFE) of the BDV64BG?

The minimum DC current gain is 1000 at 5A collector current and 4V VCE.

What is the collector-emitter saturation voltage of the BDV64BG?

The maximum VCE(sat) is 2V at 5A collector current and 20mA base current.

What is the power dissipation rating of the BDV64BG?

The maximum power dissipation is 125W at case temperature 25°C, derated above 25°C at 1.0W/°C.

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