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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
285 pcs
|
285 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
53 pcs
|
53 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Base Current (IB) | |
| Collector Cutoff Current (ICEO) | |
| Collector-Base Voltage (VCB) | |
| Collector-Emitter Sustaining Voltage (VCEO(sus)) | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Emitter-Base Voltage (VEB) | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Thermal Resistance Junction-to-Case (RθJC) | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The BDV64BG is a PNP Darlington power transistor manufactured by ON Semiconductor. It is designed for use as an output device in complementary general-purpose amplifier applications. The device features a high DC current gain (hFE) of 1000 minimum at 5A collector current and 4V VCE, making it suitable for high-gain switching and linear amplification. The transistor is rated for a maximum collector-emitter voltage (VCEO) of 100V, continuous collector current of 10A (20A peak), and a power dissipation of 125W at case temperature 25°C. It has a low collector-emitter saturation voltage of 2V maximum at 5A/20mA base current. The device is housed in a TO-247-3 package (also known as SOT-93) and is through-hole mountable. The junction-to-case thermal resistance is 1.0°C/W. The BDV64BG is lead-free (Pb-Free) and RoHS compliant. It is the PNP complement to the NPN BDV65B. The operating junction temperature range is -65°C to 150°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $4.13 | $4.13 |
| 10+ | $2.28 | $2.28 |
| 120+ | $1.86 | $1.86 |
| 570+ | $1.62 | $1.62 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) is 100V.
The BDV64BG is available in a TO-247-3 (SOT-93) through-hole package.
The operating junction temperature range is -65°C to 150°C.
The BDV64BG is listed as RoHS3 compliant, but this information is unverified. The datasheet states it is a Pb-Free device.
The minimum DC current gain is 1000 at 5A collector current and 4V VCE.
The maximum VCE(sat) is 2V at 5A collector current and 20mA base current.
The maximum power dissipation is 125W at case temperature 25°C, derated above 25°C at 1.0W/°C.