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55 pcs
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55 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BDV64B from Thomson-CSF is a PNP Silicon Power Darlington Transistor. It is designed for complementary use with the BDV65, BDV65A, BDV65B, and BDV65C series. This power transistor features a continuous collector current of 12A and a collector-emitter voltage of up to 100V. It can dissipate up to 125W at a 25°C case temperature.
The BDV64B has a minimum DC current gain (hFE) of 1000 at 4V and 5A. The device operates within a junction temperature range of -65°C to +150°C. It is housed in a TO-218 package, suitable for through-hole mounting.
This component is designed for power switching applications where complementary PNP and NPN transistors are required. Its robust construction and high current handling capabilities make it suitable for various power supply and amplification circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The BDV64B has a maximum continuous collector current of 12A.
The BDV64B has a collector-emitter voltage rating of 100V.
The maximum power dissipation for the BDV64B at 25°C case temperature is 125W.
The BDV64B has a minimum DC current gain (hFE) of 1000 at 4V and 5A.
The BDV64B is available in a TO-218 package.