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BDV64B The BDV64B is a PNP Silicon Power Darlington Transistor from ST, designed for complementary use with BDV65 series. It features a 100V collector-emitter breakdown voltage and a 12A continuous collector current.
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BDV64B

Available from 2 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
The BDV64B is a PNP Silicon Power Darlington Transistor from ST, designed for complementary use with BDV65 series. It features a 100V collector-emitter breakdown voltage and a 12A continuous collector current.
✓ Total Stock: 196 pcs
$ Price Range: $0.99

BDV64B Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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Non-Authorised Inventory information
171 pcs
On Request
171 pcs On Request 1 On Request On Request On Request On Request On Request
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Non-Authorised Inventory information
25 pcs
On Request
25 pcs On Request 1 On Request On Request On Request On Request On Request
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BDV64B Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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BDV64B Description

Short technical summary and product information.

The BDV64B is a PNP Silicon Power Darlington Transistor manufactured by STMicroelectronics. It is designed for complementary use with the BDV65 series and is suitable for power applications requiring high current handling capabilities.

 

Key electrical specifications include a continuous collector current of 12A and a peak collector current of 15A. The collector-emitter breakdown voltage is rated at 100V, with a minimum hFE of 1000 at 4V and 5A. The device can dissipate up to 125W at 25°C case temperature.

 

This transistor is housed in a TO-218 package and is designed for through-hole mounting. It operates within a junction temperature range of -65°C to +150°C. The BDV64B is a robust component for power switching and amplification circuits.

BDV64B Quick Information

Product Type: PNP Bipolar Transistor
Canonical Name: BDV64B PNP Silicon Power Darlington Transistor
Subcategory: Single Bipolar Transistors

BDV64B Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

BDV64B Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

BDV64B Features

  • PNP Silicon Power Darlington Transistor
  • 100V Collector-Emitter Breakdown Voltage
  • 12A Continuous Collector Current
  • 125W Maximum Power Dissipation
  • TO-218 Through Hole Package

BDV64B Applications

  • Used in RF signal filtering circuits
  • Suitable for RF switching applications
  • Ideal for high-voltage rectification
  • Applied in communication equipment

BDV64B FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum continuous collector current for the BDV64B?

The maximum continuous collector current for the BDV64B is 12 A.

What is the collector-emitter breakdown voltage of the BDV64B?

The collector-emitter breakdown voltage of the BDV64B is 100 V.

What is the maximum power dissipation of the BDV64B?

The maximum power dissipation of the BDV64B is 125 W at 25°C case temperature.

What package type is the BDV64B available in?

The BDV64B is available in a TO-218 package.

What is the minimum DC current gain (hFE) for the BDV64B?

The minimum DC current gain (hFE) for the BDV64B is 1000 at 5A and 4V.

What is the transition frequency of the BDV64B transistor?

The transition frequency of the BDV64B transistor is 60 MHz.

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