BDV64B PNP Darlington transistor rated for 100V collector-emitter voltage and 10A continuous collector current. Housed in a through-hole SOT-93 (TO-218) package.
Mfr Part #:

BDV64B

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
PNP Darlington transistor rated for 100V collector-emitter voltage and 10A continuous collector current. Housed in a through-hole SOT-93 (TO-218) package.
Total Stock: 14 pcs
$ Price Range: $1.38 - $4.25

BDV64B Available from 1 distributor

Authorised
Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
14 pcs
14 pcs On Request 1 On Request On Request On Request On Request On Request

BDV64B Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Base Current
Collector Current - Peak
Collector-Base Voltage (VCBO)
Collector-Emitter Sustaining Voltage (VCEO(sus))
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Emitter-Base Voltage (VEBO)
Mounting Type
Operating Temperature
Polarity
Power
Supplier Device Package
Tape & Reel
Thermal Resistance - Junction to Case
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

BDV64B Description

Short technical summary and product information.

The BDV64B is a PNP Darlington transistor from On Semiconductor designed for high-current switching and amplifier applications. It features a collector-emitter voltage (VCEO) of 100V and continuous collector current of 10A (20A peak). With a minimum DC current gain of 1000 at 5A, it provides high amplification.

 

The device includes built-in base-emitter shunt resistors for improved stability. Power dissipation is 125W with a junction-to-case thermal resistance of 1.0°C/W. Operating temperature range is -65°C to 150°C.

 

The transistor is offered in a through-hole SOT-93 (TO-218) package, suitable for PCB mounting. It is Pb-free and RoHS compliant per the datasheet.

BDV64B Quick Information

Product Type: Darlington Transistor
Canonical Name: BDV64B PNP Darlington Transistor
Subcategory: Single Bipolar Transistor

BDV64B Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

BDV64B Estimated Pricing

Qty Low High
1+ $4.25 $4.25
10+ $2.35 $2.35
25+ $2.34 $2.34
60+ $2.32 $2.32
450+ $1.45 $1.45
900+ $1.41 $1.41
1,800+ $1.39 $1.39
3,600+ $1.38 $1.38

Estimated market price range - modelled values for guidance only, not live distributor offers.

BDV64B Features

  • PNP Darlington transistor with 100V VCEO.
  • Continuous collector current rating of 10A.
  • Minimum DC current gain of 1000 at 5A.
  • 125W power dissipation capability.
  • Through-hole SOT-93 (TO-218) package.

BDV64B Applications

  • Output devices in complementary amplifier applications.
  • High-current switching and linear amplification.
  • Power management in industrial and consumer electronics.

BDV64B FAQs

7 frequently asked questions generated from this part’s specifications.
What is the collector-emitter voltage rating of the BDV64B?

The BDV64B has a collector-emitter voltage (VCEO) rating of 100V.

What package does the BDV64B come in?

The BDV64B is available in a TO-218-3 (SOT-93) through-hole package.

What is the operating temperature range of the BDV64B?

The operating junction temperature range is -65°C to 150°C.

Is the BDV64B RoHS compliant?

The BDV64B is marked as RoHS3 Compliant and is Pb-Free per the datasheet.

What is the DC current gain of the BDV64B?

Minimum DC current gain (hFE) is 1000 at Ic=5A, Vce=4V.

What is the maximum collector current?

Continuous collector current is 10A, with a peak rating of 20A.

What is the power dissipation of the BDV64B?

Power dissipation is 125W at case temperature 25°C.

Home
Account

Categories