| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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21 pcs
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21 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BDV64A is a PNP Silicon Power Darlington Transistor manufactured by NXP Semiconductors. It is designed for complementary use with the BDV65 series.
Key electrical specifications include a continuous collector current of 12A and a maximum power dissipation of 125W at 25°C case temperature. The device features a minimum hFE of 1000 at 4V and 5A. Absolute maximum ratings include a collector-emitter voltage of up to -120V (for BDV64C) and a peak collector current of 15A.
The transistor is housed in a SOT-93 package, suitable for through-hole mounting. The operating junction temperature range is -65°C to +150°C, and the storage temperature range is also -65°C to +150°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.26 | $1.26 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The continuous collector current for the BDV64A is 12A.
The maximum power dissipation of the BDV64A at 25°C case temperature is 125W.
The minimum hFE of the BDV64A is 1000 at VCE = -4V and IC = -5A.
The BDV64A is available in the SOT-93 package.
The operating junction temperature range for the BDV64A is -65°C to +150°C.