BDV64A The BDV64A is a PNP Silicon Power Darlington Transistor from NXP Semiconductors. It offers a continuous collector current of 12A and a maximum power dissipation of 125W at 25°C case temperature.
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BDV64A

Available from 1 distributors
Mfr Name: NXP Semiconductors
NXP Semiconductors
The BDV64A is a PNP Silicon Power Darlington Transistor from NXP Semiconductors. It offers a continuous collector current of 12A and a maximum power dissipation of 125W at 25°C case temperature.
✓ Total Stock: 21 pcs
$ Price Range: $1.26

BDV64A Available from 1 distributor

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BDV64A Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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BDV64A Description

Short technical summary and product information.

The BDV64A is a PNP Silicon Power Darlington Transistor manufactured by NXP Semiconductors. It is designed for complementary use with the BDV65 series.

 

Key electrical specifications include a continuous collector current of 12A and a maximum power dissipation of 125W at 25°C case temperature. The device features a minimum hFE of 1000 at 4V and 5A. Absolute maximum ratings include a collector-emitter voltage of up to -120V (for BDV64C) and a peak collector current of 15A.

 

The transistor is housed in a SOT-93 package, suitable for through-hole mounting. The operating junction temperature range is -65°C to +150°C, and the storage temperature range is also -65°C to +150°C.

BDV64A Quick Information

Product Type: PNP Silicon Power Darlington Transistor
Canonical Name: BDV64A PNP Silicon Power Darlington Transistor
Subcategory: RF Diodes

BDV64A Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

BDV64A Estimated Pricing

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1+ $1.26 $1.26

Estimated market price range - modelled values for guidance only, not live distributor offers.

BDV64A Features

  • 12A continuous collector current.
  • 125W maximum power dissipation.
  • Minimum hFE of 1000.
  • SOT-93 package for through-hole mounting.
  • Designed for complementary use with BDV65 series.

BDV64A Applications

  • Used in RF signal filtering circuits
  • Suitable for RF power amplifiers
  • Ideal for high-voltage RF switching
  • Applicable in RF transmitters and receivers

BDV64A FAQs

5 frequently asked questions generated from this part’s specifications.
What is the continuous collector current for the BDV64A?

The continuous collector current for the BDV64A is 12A.

What is the maximum power dissipation of the BDV64A at 25°C case temperature?

The maximum power dissipation of the BDV64A at 25°C case temperature is 125W.

What is the minimum hFE of the BDV64A?

The minimum hFE of the BDV64A is 1000 at VCE = -4V and IC = -5A.

What package type is the BDV64A available in?

The BDV64A is available in the SOT-93 package.

What is the operating junction temperature range for the BDV64A?

The operating junction temperature range for the BDV64A is -65°C to +150°C.

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