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50 pcs
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50 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BDV64 by Thomson-CSF is a PNP Darlington bipolar junction transistor (BJT) housed in a TO-247 package. This through-hole component is suitable for various electronic applications requiring power amplification or switching. It offers a maximum collector current rating of 10A and a maximum power dissipation of 125W. The transistor operates with a collector-emitter voltage rating of -100V and a collector base voltage of 100V. Its minimum operating temperature is -65°C, and the maximum is 150°C. The typical DC current gain (hFE) is 1000 at 5A and 4V, with a typical collector-emitter saturation voltage of 2V at 5A. The gain-bandwidth product is approximately 0.1MHz.
Designed for reliability within specified limits, the BDV64 is not intended for highly specialized quality or reliability requirements, nor for hazardous environments, aerospace, or medical fields. Its robust TO-247 package facilitates heat dissipation, making it suitable for power applications. The through-hole mounting ensures secure placement on PCBs.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.93 | $1.93 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector current is 10A.
The maximum power dissipation is 125W.
The operating temperature range is -65°C to 150°C.
The BDV64 transistor is supplied in a TO-247 package.
The DC voltage rating between collector and emitter is -100V.
The typical DC current gain is 1000 at 5A and 4V.