| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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47 pcs
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47 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BDT65C is an NPN Darlington transistor manufactured by NXP Semiconductors. This component is housed in a TO-220 package, making it suitable for various electronic applications.
Key electrical specifications include a maximum Collector Emitter Voltage of 120V and a maximum Power Dissipation of 125W. The device is designed to operate within a temperature range up to 150°C.
This transistor is part of the broader category of discrete semiconductor products. Its specifications suggest suitability for power switching and amplification tasks where robust performance is required. The TO-220 package is commonly used for through-hole mounting, facilitating heat dissipation.
Note: The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum Collector Emitter Voltage for the BDT65C is 120V.
The BDT65C transistor has a maximum power dissipation of 125W.
The BDT65C can operate at a maximum temperature of 150°C.
The BDT65C is available in a TO-220 package.