| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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300 pcs
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300 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Junction Temperature |
The DSI BDT65B is a Silicon NPN Darlington Power Transistor. It is designed for audio output stages and general purpose amplifier applications. This transistor features a continuous collector current of 12A and a peak collector current of 20A.
Key electrical characteristics include a Collector-Emitter Voltage (VCEO) of 100V for the BDT65B variant, and a minimum DC Current Gain (hFE) of 1000 at IC=5A. The Collector-Emitter Saturation Voltage (VCE(sat)) is a maximum of 3.0V at IC=10A. It also has a maximum junction temperature of 150℃ and a thermal resistance (junction-to-case) of 1℃/W.
The BDT65B is a complement to the BDT64 series. It is suitable for applications requiring robust device performance and reliable operation. The datasheet indicates minimum lot-to-lot variations for consistent performance.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.06 | $0.06 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum Collector-Emitter Voltage (VCEO) for the BDT65B is 100V.
The continuous collector current (IC) for the BDT65B is 12A.
The minimum DC Current Gain (hFE) for the BDT65B is 1000 at IC=5A.
The maximum junction temperature (TJ) for the BDT65B is 150℃.
The BDT65B is designed for audio output stages and general purpose amplifier applications.
