| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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28 pcs
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28 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BDT60C is a PNP Transistor manufactured by NXP Semiconductors, designed for special purpose applications. It comes in a TO-220 package with through-hole mounting.
Key electrical specifications include a maximum collector current of 4A, a collector base voltage of 120V, and an emitter base voltage of 5V. The collector emitter saturation voltage is 2.5V. Thermally, it has a maximum power dissipation of 2W and an operating temperature range from -65°C to 150°C.
This component is suitable for various electronic designs requiring a reliable PNP transistor with these specific electrical and thermal characteristics. Its through-hole mounting makes it suitable for traditional PCB assembly processes.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.87 | $1.87 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector current is 4A.
The collector base voltage is 120V.
The maximum power dissipation is 2W.
The operating temperature range is from -65°C to 150°C.
The BDT60C comes in a TO-220 package.
The BDT60C is mounted using the through-hole method.