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BDP954E6327 General Purpose Bipolar Transistor (BJT) with 100V collector-emitter voltage, 3A collector current, and 5W power dissipation. Surface mount package SOT-223 (PG-SOT223-4).
Mfr Part #:

BDP954E6327

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
General Purpose Bipolar Transistor (BJT) with 100V collector-emitter voltage, 3A collector current, and 5W power dissipation. Surface mount package SOT-223 (PG-SOT223-4).
✓ Total Stock: 1,000 pcs

BDP954E6327 Available from 1 distributor

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Smaxon Electronics ✓
Non-Authorised Inventory information
1,000 pcs
On Request
1000 pcs On Request 1 On Request On Request 11+ On Request On Request
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BDP954E6327 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Mounting Type
Operating Temperature
Power
Supplier Device Package
Tape & Reel
Vce Saturation (Max) @ Ib, Ic
Voltage
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BDP954E6327 Description

Short technical summary and product information.

The BDP954E6327 is a general purpose bipolar junction transistor manufactured by Infineon Technologies. It is designed for general purpose switching and amplification applications.

 

With a collector-emitter voltage rating of 100V and a collector current capability of 3A, this transistor can handle moderate power levels. The power dissipation is rated at 5W. The DC current gain (hFE) is a minimum of 50 at 1A/2V, and the saturation voltage (Vce(sat)) is 500mV maximum at 2A/200mA. The transition frequency is 100MHz, suitable for low to medium frequency applications.

 

The device is housed in a surface mount PG-SOT223-4 package (also known as TO-261-4). The maximum junction temperature is 150°C. It is listed as RoHS compliant and REACH unaffected.

BDP954E6327 Quick Information

Product Type: Bipolar Junction Transistor (BJT)
Canonical Name: Infineon BDP954E6327 General Purpose Bipolar Transistor
Subcategory: General Purpose Transistor

BDP954E6327 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

BDP954E6327 Features

  • 100V collector-emitter voltage rating.
  • 3A collector current capability.
  • 5W power dissipation at 150°C Tj.
  • 100MHz transition frequency.
  • Surface mount SOT-223 package.

BDP954E6327 Applications

  • General purpose switching circuits.
  • Amplification in low to medium frequency stages.
  • Power management and driver circuits.
  • Suitable for a variety of consumer and industrial designs.

BDP954E6327 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the collector-emitter voltage rating?

100V

What is the package type?

Surface mount, PG-SOT223-4 (TO-261-4).

What is the maximum junction temperature?

150°C.

Is the BDP954E6327 RoHS compliant?

Yes, it is listed as RoHS3 compliant.

What is the minimum DC current gain (hFE)?

50 at 1A collector current and 2V collector-emitter voltage.

What is the collector-emitter saturation voltage?

500mV maximum at 2A collector current and 200mA base current.

What is the transition frequency?

100 MHz.

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