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BD912 PNP power transistor rated for 100V collector-emitter breakdown and 15A continuous collector current in a TO-220 package.
Mfr Part #:

BD912

Available from 3 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
PNP power transistor rated for 100V collector-emitter breakdown and 15A continuous collector current in a TO-220 package.
✓ Total Stock: 118,373 pcs
$ Price Range: $0.63 - $2.11

BD912 Available from 3 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Fe Components ✓
Non-Authorised Inventory information
118,350 pcs
On Request
118350 pcs On Request 1 On Request On Request On Request On Request On Request
Partservice ✓
Non-Authorised Inventory information
16 pcs
On Request
16 pcs On Request 1 On Request On Request On Request On Request On Request
Components Technology Group, Inc. ✓
Non-Authorised Inventory information
7 pcs
On Request
7 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

BD912 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Mounting Type
Operating Temperature
Power
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
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BD912 Description

Short technical summary and product information.

STMicroelectronics BD912 is a high-voltage PNP bipolar junction transistor designed for general-purpose switching and linear amplification applications. With a collector-emitter breakdown voltage (Vceo) of 100V and a continuous collector current (Ic) rating of 15A, this device delivers robust performance for medium-power circuits.

 

The transistor offers a minimum DC current gain (hFE) of 15 at Ic=5A and Vce=4V, with a maximum collector-emitter saturation voltage (Vce(sat)) of 3V at Ib=2.5A and Ic=10A. The transition frequency (fT) is 3 MHz, suitable for low-frequency power switching and regulator designs. Power dissipation reaches 90W, while the junction temperature is limited to 150°C.

 

Packaged in a TO-220-3 through-hole housing (supplied as TO-220), the BD912 supports easy mounting on heat sinks for thermal management. The part is offered with standard RoHS3 compliance, though this status is unverified, and MSL is level 1 (unlimited).

BD912 Quick Information

Product Type: PNP Bipolar Junction Transistor (BJT)
Canonical Name: STMicroelectronics BD912 PNP Bipolar Junction Transistor
Subcategory: Single PNP Transistor

BD912 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

BD912 Estimated Pricing

Qty Low High
1+ $2.11 $2.11
10+ $1.19 $1.19
100+ $0.94 $0.94
500+ $0.81 $0.81
1,000+ $0.75 $0.75
2,000+ $0.63 $0.63
4,000+ $0.63 $0.63

Estimated market price range - modelled values for guidance only, not live distributor offers.

BD912 Features

  • PNP transistor with 100V collector-emitter breakdown.
  • Continuous collector current rated at 15A.
  • Power dissipation of 90W maximum.
  • Through-hole TO-220-3 package for easy mounting.
  • Minimum DC current gain of 15 at 5A, 4V.

BD912 Applications

  • Ideal for medium-power switching circuits.
  • Used in linear voltage regulator stages.
  • Suitable for general-purpose power amplification.
  • Employed in low-frequency motor drive controls.

BD912 FAQs

3 frequently asked questions generated from this part’s specifications.
What type of transistor is the BD912?

The BD912 is a PNP bipolar junction transistor (BJT).

What is the maximum collector-emitter voltage of the BD912?

The BD912 has a collector-emitter breakdown voltage (Vceo) of 100V.

What package does the BD912 come in?

The BD912 is supplied in a TO-220-3 through-hole package (supplier device package TO-220).

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