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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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17 pcs
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17 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Supplier Device Package | |
| Tape & Reel | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The STMicroelectronics BD910 is a PNP bipolar junction transistor designed for power switching and amplification applications. It features a collector-emitter breakdown voltage of 80V, a continuous collector current rating of 15A, and a maximum power dissipation of 90W.
Key electrical characteristics include a minimum DC current gain (hFE) of 15 at Ic=5A and Vce=4V, and a maximum collector-emitter saturation voltage of 3V at Ib=2.5A and Ic=10A. The transition frequency is 3 MHz, making it suitable for moderate-speed switching.
The transistor is housed in a through-hole TO-220-3 package, which provides good thermal performance for power dissipation. The junction operating temperature is rated up to 150°C. This device is commonly used in power supply circuits, motor drives, and audio amplifiers where high current and voltage capabilities are required.
The collector-emitter breakdown voltage (Vce) is 80 V.
The maximum continuous collector current (Ic) is 15 A.
The package is TO-220-3 (through-hole), with supplier device package TO-220.
The maximum power dissipation is 90 W.
The maximum junction operating temperature is 150°C.
The RoHS status is listed as RoHS3 compliant, but this data is unverified and should be confirmed with official documentation.
The minimum DC current gain (hFE) is 15 at Ic=5A and Vce=4V.