| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
10,000 pcs
|
10000 pcs | On Request | 1 | On Request | On Request | 1102+ | On Request | On Request | |
|
5,387 pcs
|
5387 pcs | On Request | 1 | On Request | On Request | 11+ | On Request | On Request |
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The BD8632FV-E2 is an NPN silicon darlington transistor manufactured by ROHM Semiconductor. This component is designed for AF applications and offers a particularly high current gain.
Key electrical specifications include a maximum collector-emitter voltage (VCEO) of 60V, a maximum collector current (IC) of 4A, and a pulsed collector current (ICM) of 7A. The base current (IB) maximum is 0.1A. The device has a total power dissipation (Ptot) of 15W.
Thermal characteristics include a junction-to-ambient thermal resistance (RthJA) of 62.5 K/W and a junction-to-case thermal resistance (RthJC) of 8.3 K/W. The operating junction temperature (Tj) is rated up to 150℃, with a storage temperature range from -55℃ to +150℃.
The BD8632FV-E2 is supplied in a SOP package, suitable for surface mounting. Its design makes it useful as complementary AF push-pull output stages for color TV correction stages.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.45 | $0.45 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) is 60V.
The continuous collector current (IC) is rated at 4A.
The total power dissipation (Ptot) is 15W.
The operating junction temperature (Tj) is up to 150℃.
The BD8632FV-E2 is supplied in a SOP package.