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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
324 pcs
|
324 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
42 pcs
|
42 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Supplier Device Package | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The BD791 is an NPN power bipolar junction transistor manufactured by Motorola Semicondutor. It is designed for general-purpose switching and amplification applications requiring up to 100V collector-emitter voltage and 4A continuous collector current, with a power dissipation of 15W.
Electrical characteristics include a DC current gain (hFE) of 40 minimum at 200mA collector current and 3V Vce, and a collector-emitter saturation voltage of 3V maximum at 800mA base current and 4A collector current. The transistor has a transition frequency of 40MHz, suitable for moderate-speed switching circuits.
The BD791 is offered in a through-hole TO-225AA package (also known as TO-126-3) with a supplier device package of TO-225-3. It operates over a junction temperature range of -65°C to 150°C, allowing use in demanding environments.
| Qty | Low | High |
|---|---|---|
| 550+ | $0.55 | $0.55 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
NPN.
100V.
4A.
15W.
-65°C to 150°C (junction).
TO-225AA and TO-126-3 (through-hole).
The part is listed as RoHS3 Compliant, but this status is unverified.