BD788G The BD788G is a PNP silicon power transistor from onsemi rated for 60V collector-emitter voltage and 4A continuous collector current. It dissipates up to 15W and comes in a through-hole TO-126 package.
Mfr Part #:

BD788G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The BD788G is a PNP silicon power transistor from onsemi rated for 60V collector-emitter voltage and 4A continuous collector current. It dissipates up to 15W and comes in a through-hole TO-126 package.
Total Stock: 1,470 pcs

BD788G Available from 1 distributor

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BD788G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Base Current
Collector Current
Collector-Base Voltage
Current
DC Current Gain (Minimum @ IC = 1 A, VCE = 3 V)
DC Current Gain (Minimum @ IC = 2 A, VCE = 3 V)
DC Current Gain (Minimum @ IC=4 A, VCE=3 V)
DC Current Gain (hFE) (Min) @ Ic, Vce
Emitter-Base Voltage
Frequency
Mounting Type
Operating Temperature
Power
SVHC Present
Standard Package Qty
Storage Temperature
Supplier Device Package
Tape & Reel
Thermal Resistance - Junction to Case
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

BD788G Description

Short technical summary and product information.

The BD788G is a PNP silicon power transistor manufactured by onsemi (formerly ON Semiconductor). It is designed for lower power audio amplifier and low current, high-speed switching applications. The device features a collector-emitter voltage rating of 60V, a collector-base voltage of 80V, and an emitter-base voltage of 6V. It can handle a continuous collector current of 4A with a peak current capability of 8A, and a continuous base current of 1A.

 

With a total power dissipation of 15W at a case temperature of 25°C, the BD788G provides adequate thermal headroom for moderate power applications. The DC current gain ranges from 40 to 250 at a collector current of 200mA and collector-emitter voltage of 3V, with a minimum gain of 25 at 1A and 20 at 2A. The collector-emitter saturation voltage is a maximum of 2.5V at a base current of 800mA and collector current of 4A. The transition frequency is 50MHz.

 

The device operates over a junction temperature range of -65°C to 150°C and has a thermal resistance from junction to case of 8.34°C/W. It is packaged in a TO-225 (TO-225AA, TO-126-3) through-hole package with a supplier device package of TO-126. The BD788G is Pb-Free and RoHS compliant, and is shipped in boxes of 500 units.

BD788G Quick Information

Product Type: Bipolar Junction Transistor (BJT)
Series: BD78xG
Canonical Name: BD788G PNP Silicon Power Transistor
Subcategory: Single PNP Transistor

BD788G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-Free

BD788G Features

  • PNP silicon power transistor for audio and switching.
  • Rated for 60V collector-emitter voltage.
  • Handles 4A continuous collector current.
  • Dissipates up to 15W at case temperature 25°C.
  • Pb-Free and RoHS compliant package.

BD788G Applications

  • Used in lower power audio amplifier circuits.
  • Suitable for low current high-speed switching.
  • Ideal for through-hole power transistor designs.
  • Works in general purpose PNP amplification stages.

BD788G FAQs

6 frequently asked questions generated from this part’s specifications.
What is the collector-emitter voltage rating of the BD788G?

The collector-emitter voltage (VCEO) is 60V.

What is the maximum continuous collector current?

The maximum continuous collector current is 4A, with a peak current of 8A.

What is the power dissipation of the BD788G?

The total power dissipation is 15W at a case temperature of 25°C.

What package is the BD788G available in?

The BD788G is available in a TO-225 (TO-225AA, TO-126-3) through-hole package, with a supplier device package of TO-126.

What is the operating temperature range?

The operating junction temperature range is -65°C to 150°C.

Is the BD788G RoHS compliant?

Yes, the BD788G is Pb-Free and RoHS compliant as stated in the datasheet.

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