| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
450 pcs
|
450 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The BD788 is a PNP silicon power transistor from onsemi designed for lower power audio amplifier and low current high-speed switching applications. It features a maximum collector-emitter voltage (VCEO) of 60V, collector-base voltage (VCBO) of 80V, and emitter-base voltage (VEBO) of 6V. The continuous collector current rating is 4A with a peak capability of 8A, and base current is limited to 1A.
DC current gain (hFE) is specified at multiple test conditions: minimum 40 at 200mA/3V, 25 at 1A/3V, 20 at 2A/3V, and 5 at 4A/3V. The collector-emitter saturation voltage is typically 2.5V maximum at 4A collector current with 800mA base drive. Transition frequency is 50 MHz. Power dissipation is 15W at case temperature 25°C, with a derating factor of 0.12 mW/°C above 25°C. The operating and storage junction temperature range is -65°C to 150°C, and thermal resistance junction-to-case is 8.34°C/W.
The device is housed in a TO-225AA / TO-126-3 through-hole package and is supplied in boxes of 500 units. It is Pb-Free and RoHS compliant. Note that this part is discontinued and not recommended for new designs.
| Qty | Low | High |
|---|---|---|
| 2,500+ | $0.22 | $0.22 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
Maximum collector-emitter voltage (VCEO) is 60V.
TO-225AA / TO-126-3 through-hole package.
-65°C to 150°C junction temperature.
Yes, it is RoHS3 compliant and Pb-Free.
Minimum DC current gain (hFE) is 40 at 200mA, 3V.