BD788 PNP bipolar transistor, 60V collector-emitter voltage, 4A continuous collector current, 15W power dissipation, in TO-126 through-hole package.
Mfr Part #:

BD788

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
PNP bipolar transistor, 60V collector-emitter voltage, 4A continuous collector current, 15W power dissipation, in TO-126 through-hole package.
✓ Total Stock: 450 pcs
$ Price Range: $0.22

BD788 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
450 pcs
450 pcs On Request 1 On Request On Request On Request On Request On Request

BD788 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Mounting Type
Operating Temperature
Power
Storage Temperature
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

BD788 Description

Short technical summary and product information.

The BD788 is a PNP silicon power transistor from onsemi designed for lower power audio amplifier and low current high-speed switching applications. It features a maximum collector-emitter voltage (VCEO) of 60V, collector-base voltage (VCBO) of 80V, and emitter-base voltage (VEBO) of 6V. The continuous collector current rating is 4A with a peak capability of 8A, and base current is limited to 1A.

 

DC current gain (hFE) is specified at multiple test conditions: minimum 40 at 200mA/3V, 25 at 1A/3V, 20 at 2A/3V, and 5 at 4A/3V. The collector-emitter saturation voltage is typically 2.5V maximum at 4A collector current with 800mA base drive. Transition frequency is 50 MHz. Power dissipation is 15W at case temperature 25°C, with a derating factor of 0.12 mW/°C above 25°C. The operating and storage junction temperature range is -65°C to 150°C, and thermal resistance junction-to-case is 8.34°C/W.

 

The device is housed in a TO-225AA / TO-126-3 through-hole package and is supplied in boxes of 500 units. It is Pb-Free and RoHS compliant. Note that this part is discontinued and not recommended for new designs.

BD788 Quick Information

Product Type: Bipolar Transistor - PNP
Canonical Name: BD788 PNP Bipolar Transistor
Subcategory: PNP

BD788 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): Level 1 (Unlimited)
REACH Status: REACH Unaffected
Lead Free: Pb-Free

BD788 Estimated Pricing

Qty Low High
2,500+ $0.22 $0.22

Estimated market price range - modelled values for guidance only, not live distributor offers.

BD788 Features

  • PNP silicon power transistor.
  • 60V collector-emitter voltage rating.
  • 4A continuous collector current.
  • 15W power dissipation capability.
  • Pb-Free and RoHS compliant.

BD788 Applications

  • Lower power audio amplifier circuits.
  • Low current high-speed switching.
  • General purpose power switching.

BD788 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the collector-emitter voltage rating?

Maximum collector-emitter voltage (VCEO) is 60V.

What package does the BD788 come in?

TO-225AA / TO-126-3 through-hole package.

What is the operating temperature range?

-65°C to 150°C junction temperature.

Is the BD788 RoHS compliant?

Yes, it is RoHS3 compliant and Pb-Free.

What is the DC current gain?

Minimum DC current gain (hFE) is 40 at 200mA, 3V.

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