| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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250 pcs
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250 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BD780 is a Silicon PNP bipolar junction transistor manufactured by Motorola Semiconductor. It is designed for general-purpose amplification and switching applications.
Key electrical specifications include a maximum collector-emitter voltage (Vce) of 80V and a maximum continuous collector current (Ic) of 4A. The device can dissipate up to 15W of power (Pd). Its forward current transfer ratio (hFE) is a minimum of 750, and it has a transition frequency (ft) of 20 MHz.
This transistor is housed in a TO-126 package, which is a through-hole mounting type. The operating junction temperature can reach up to 150°C. The BD780 is suitable for various electronic circuits requiring a reliable PNP transistor with moderate power handling capabilities.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.93 | $1.93 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector current for the BD780 transistor is 4A.
The maximum collector-emitter voltage for the BD780 is 80V.
The BD780 transistor has a maximum power dissipation rating of 15W.
The maximum operating junction temperature for the BD780 is 150°C.
The BD780 transistor is supplied in a TO-126 package.
The minimum forward current transfer ratio (hFE) for the BD780 is 750.