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BD743C-S BD743C-S is an NPN silicon power transistor from Bourns. It features a 100V collector-emitter voltage, 15A continuous collector current, and 90W power dissipation in a TO-220 through-hole package.
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BD743C-S

Available from 1 distributors
Mfr Name: Bourns
Bourns
BD743C-S is an NPN silicon power transistor from Bourns. It features a 100V collector-emitter voltage, 15A continuous collector current, and 90W power dissipation in a TO-220 through-hole package.
✓ Total Stock: 3,002 pcs

BD743C-S Available from 1 distributor

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3,002 pcs
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BD743C-S Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Mounting Type
Operating Temperature
Power
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
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BD743C-S Description

Short technical summary and product information.

The BD743C-S is an NPN silicon power transistor designed for general-purpose switching and amplification applications. With a maximum collector-emitter voltage of 100V and continuous collector current of 15A (20A peak), it is suitable for medium-power circuits.

 

Key electrical specifications include a DC current gain (hFE) of 20 minimum at 5A collector current and 4V collector-emitter voltage, and a maximum collector-emitter saturation voltage of 3V at 15A collector current. The device can dissipate up to 90W when case temperature is maintained at 25°C, derating linearly to 150°C.

 

The transistor is housed in a standard TO-220-3 through-hole package, which allows for easy mounting on heatsinks. Operating junction temperature range is -65°C to +150°C.

 

Note: The datasheet indicates this series is obsolete and not recommended for new designs.

BD743C-S Quick Information

Product Type: Bipolar (BJT) Single Transistor
Series: BD743
Canonical Name: BD743C-S NPN Silicon Power Transistor
Subcategory: Bipolar Junction Transistors

BD743C-S Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected

BD743C-S Features

  • NPN silicon power transistor design.
  • 100V maximum collector-emitter voltage.
  • 15A continuous collector current rating.
  • 90W power dissipation at 25°C case.
  • TO-220 through-hole mounting package.

BD743C-S Applications

  • Suitable for medium power switching circuits.
  • Use in linear amplifier output stages.
  • Designed for complementary BD744 series pairs.
  • General purpose power management applications.

BD743C-S FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage of BD743C-S?

The maximum collector-emitter voltage (VCEO) is 100 V at 25°C case temperature.

What is the continuous collector current rating?

The continuous collector current (IC) is 15 A, with a peak current of 20 A for pulses up to 0.3 ms.

What package does the BD743C-S come in?

The BD743C-S is supplied in a TO-220-3 through-hole package.

What is the operating temperature range?

The operating junction temperature range is -65°C to +150°C.

Is the BD743C-S RoHS compliant?

The RoHS status is listed as RoHS3 Compliant (unverified, low confidence).

What is the DC current gain (hFE) of this transistor?

The minimum DC current gain (hFE) is 20 at Ic=5A and Vce=4V.

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