| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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57 pcs
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57 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Tape & Reel | |
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The BD708 is a PNP silicon power transistor manufactured by STMicroelectronics, designed for power linear and switching applications in industrial equipment. It is the complementary PNP type to the BD707 NPN transistor, and is part of a family that includes the BD709/BD711 (NPN) and BD712 (PNP) devices.
Key electrical specifications include a maximum collector-emitter voltage (VCEO) of 60V, a maximum collector current of 12A, and a peak collector current of 18A. The device can dissipate up to 75W at a case temperature of 25°C, with a maximum junction temperature of 150°C. The DC current gain (hFE) is a minimum of 15 at Ic=4A and Vce=4V, and the collector-emitter saturation voltage is a maximum of 1V at Ib=400mA and Ic=4A.
The BD708 is housed in a JEDEC TO-220 plastic package with through-hole mounting, making it suitable for standard PCB assembly. The thermal resistance from junction to case is 1.67°C/W, and from junction to ambient is 70°C/W. The device operates over a storage temperature range of -65°C to 150°C.
This transistor is intended for use in power linear and switching circuits in industrial equipment. Its complementary NPN counterpart, the BD707, allows for push-pull or complementary output stage designs. The datasheet marks this product as obsolete, so designers should verify availability before specifying it in new designs.
The maximum collector-emitter voltage (VCEO) is 60V.
The maximum continuous collector current is 12A, with a peak collector current of 18A.
The maximum power dissipation is 75W at a case temperature of 25°C.
The BD708 is available in a TO-220-3 package with through-hole mounting.
The maximum junction temperature is 150°C, and the storage temperature range is -65°C to 150°C.
The BD708 is listed as RoHS3 compliant, though this status is unverified.
The minimum DC current gain (hFE) is 15 at Ic=4A and Vce=4V.