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20 pcs
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20 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BD684 is a PNP Silicon Darlington Power Transistor manufactured by NXP Semiconductors. It is designed for use in audio and video applications, leveraging its monolithic Darlington circuit for enhanced performance.
Key electrical specifications include a maximum collector-emitter voltage (VCEO) of 120V, a maximum collector current (IC) of 4A, and a peak collector current (ICM) of 6A. The device offers a typical DC current gain (HFE) of 2200 at 1.5A and 3V.
This transistor is housed in a standard TO-126 plastic package, suitable for through-hole mounting. Thermal characteristics include a junction-to-mounting base thermal resistance of 3.12 K/W. The operating temperature range is from -65°C to +150°C.
The BD684 is the PNP complement to the NPN BD683 transistor, providing flexibility in circuit design for various audio and video amplification tasks.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the BD684 is 120V.
The BD684 has a continuous collector current (IC) rating of 4A.
The typical DC current gain (HFE) of the BD684 at 1.5A is 2200.
The BD684 is supplied in a TO-126 plastic package.
The operating temperature range for the BD684 is -65°C to +150°C.
The BD684 is listed as RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the BD684 is Level 1.