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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
6,000 pcs
|
6000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Supplier Device Package | |
| Tape & Reel | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The BD682S is a PNP Darlington bipolar junction transistor manufactured by On Semiconductor. It is designed for general-purpose amplification and switching applications requiring high current gain. The transistor features a collector-emitter breakdown voltage of 100V and a continuous collector current rating of 4A. With a minimum DC current gain of 750 at 1.5A and 3V, it provides high amplification capability. The maximum collector-emitter saturation voltage is 2.5V at 30mA base current and 1.5A collector current, ensuring efficient switching performance. Power dissipation is rated at 14W, and the device can operate at junction temperatures up to 150°C. The BD682S is housed in a through-hole TO-126-3 package (also known as TO-225AA), making it suitable for PCB mounting in a variety of industrial and consumer electronics applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.23 | $1.23 |
| 10+ | $0.76 | $0.76 |
| 100+ | $0.50 | $0.50 |
| 500+ | $0.39 | $0.39 |
| 1,000+ | $0.34 | $0.34 |
| 2,000+ | $0.29 | $0.29 |
| 4,000+ | $0.27 | $0.27 |
| 10,000+ | $0.26 | $0.26 |
| 24,000+ | $0.25 | $0.25 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
100V.
Through-hole TO-126-3 (also TO-225AA).
150°C junction temperature.
The part is listed as RoHS3 compliant, but this information is unverified.
4A DC.
750 at Ic=1.5A, Vce=3V.
14W.