Mfr Part #:

BD682

The BD682 is a PNP power transistor from NXP Semiconductors, featuring a Darlington configuration and SOT-32 package. It is suitable for medium power linear and switching applications.

✓ Total Stock: 47 pcs

$ Price Range: $2.01

BD682 Available from 1 distributor

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Partservice ✓ Non-Authorised Inventory information	47 pcs On Request	47 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

BD682 Specifications Quick View

Most important parameters for selection – full specs in datasheet.

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Category	New Products
Manufacturer Name	NXP Semiconductors
Configuration	Darlington
Material	Si
Mounting Type	Through Hole

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BD682 Description

Short technical summary and product information.

The BD682 is a silicon epitaxial-base PNP power transistor from NXP Semiconductors, utilizing a monolithic Darlington configuration. It is mounted in a Jedec SOT-32 package, making it suitable for medium power linear and switching applications.

Key electrical characteristics include a Collector-Emitter Breakdown Voltage of -100V and a minimum DC Current Gain (hFE) of 750 at 1.5A. The transistor is constructed from silicon and is designed for general-purpose amplification and medium power applications.

This power transistor is intended for use in applications requiring moderate power handling capabilities. Its PNP polarity and Darlington configuration provide specific performance characteristics for switching and amplification tasks.

BD682 Quick Information

Product Type: PNP Power Transistor

Canonical Name: BD682 PNP Power Transistor

Subcategory: PNP

BD682 Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

BD682 Estimated Pricing

Qty	Low	High
1+	$2.01	$2.01

Estimated market price range - modelled values for guidance only, not live distributor offers.

BD682 Features

PNP power transistor in Darlington configuration.
Collector-Emitter Breakdown Voltage: -100V.
Minimum DC Current Gain (hFE): 750 @ -1.5A.
Packaged in SOT-32 for through-hole mounting.
Suitable for medium power linear and switching.

BD682 Applications

Suitable for medium power linear amplifiers.
Used in switching power supply circuits.
Ideal for high-voltage switching applications.
Applicable in general-purpose transistor switching.
Suitable for Darlington transistor configurations.

BD682 FAQs

5 frequently asked questions generated from this part’s specifications.

What is the Collector-Emitter Breakdown Voltage of the BD682?

-100V

What is the minimum DC Current Gain (hFE) for the BD682 at -1.5A?

750

What package type is the BD682 transistor in?

SOT-32

What is the polarity of the BD682 transistor?

PNP

What is the material of the BD682 transistor?