| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
38,400 pcs
|
38400 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
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| Supplier Device Package | |
| Tape & Reel | |
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| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The BD681STU is an NPN Darlington transistor from On Semiconductor. It features a collector-emitter breakdown voltage (VCEO) of 100V and a collector current (IC) rating of 4A, with a power dissipation of 40W. The DC current gain (hFE) is minimum 750 at a test condition of Ic=1.5A, Vce=3V. The collector-emitter saturation voltage (Vce(sat)) is maximum 2.5V at Ib=30mA, Ic=1.5A. The maximum junction temperature (Tj) is 150°C.
This transistor is housed in a TO-225AA / TO-126-3 package and is designed for through-hole mounting with 3 pins. It is suitable for general-purpose switching and amplification applications requiring high current gain. The device is marked as RoHS3 compliant and REACH unaffected, though these compliance statuses are unverified.
| Qty | Low | High |
|---|---|---|
| 3,840+ | $0.17 | $0.17 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
100V
4A
40W
TO-225AA / TO-126-3
150°C
RoHS3 compliant (unverified)