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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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2,140 pcs
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2140 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | |
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| Operating Temperature | |
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| Supplier Device Package | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The BD680ASTU is a PNP Darlington bipolar junction transistor manufactured by On Semiconductor. It is designed for medium-power switching and amplification applications, combining two transistors in a Darlington configuration to achieve high current gain. The device is rated for a collector-emitter voltage of 80V and a collector current of 4A, with a maximum power dissipation of 14W.
Key electrical characteristics include a minimum DC current gain (hFE) of 750 at a collector current of 2A and collector-emitter voltage of 3V, and a maximum collector-emitter saturation voltage of 2.8V at a base current of 40mA and collector current of 2A. The junction operating temperature is rated up to 150°C.
The transistor is housed in a TO-225AA / TO-126-3 through-hole package, with the supplier device package specified as TO-126-3. This package is suitable for PCB mounting in applications requiring moderate heat dissipation. The Darlington configuration provides high current gain, making it suitable for driving loads such as relays, solenoids, and other inductive loads where high gain and low drive current are beneficial.
| Qty | Low | High |
|---|---|---|
| 2,140+ | $0.19 | $0.19 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The BD680ASTU has a collector-emitter voltage (Vceo) rating of 80V.
The maximum collector current (Ic) is 4A.
The BD680ASTU has a maximum power dissipation of 14W.
The junction operating temperature is rated up to 150°C.
The BD680ASTU is available in a TO-225AA / TO-126-3 through-hole package, with the supplier device package specified as TO-126-3.
The minimum DC current gain (hFE) is 750, measured at Ic=2A and Vce=3V.
The maximum collector-emitter saturation voltage is 2.8V, measured at Ib=40mA and Ic=2A.