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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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7,003 pcs
|
7003 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | |
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| Tape & Reel | |
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The BD680AS is a PNP Darlington bipolar junction transistor manufactured by ON Semiconductor. It is designed for general-purpose switching and amplification applications requiring high current gain.
Key electrical specifications include a maximum collector-emitter breakdown voltage of 80 V, a maximum collector current of 4 A, and a maximum power dissipation of 14 W. The device offers a minimum DC current gain (hFE) of 750 at a test condition of 2 A collector current and 3 V collector-emitter voltage. The maximum collector-emitter saturation voltage is 2.8 V at a base current of 40 mA and collector current of 2 A.
The transistor is housed in a through-hole TO-225AA / TO-126-3 package, suitable for PCB mounting. The operating junction temperature is rated up to 150 °C.
| Qty | Low | High |
|---|---|---|
| 4,000+ | $0.19 | $0.19 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter breakdown voltage (VCEO) is 80 V.
The maximum collector current (IC) is 4 A.
The maximum power dissipation is 14 W.
The transistor is available in a TO-225AA / TO-126-3 through-hole package.
The operating junction temperature is rated up to 150 °C.
The minimum DC current gain (hFE) is 750 at a test condition of 2 A collector current and 3 V collector-emitter voltage.