LM431ACZXA
On Semiconductor
The LM431ACZXA from On Semiconductor is an adjustable shunt voltage reference. It offers a wide output voltage range and is suitable for various power management applications.
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40 pcs
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40 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BD680A is a medium-power silicon PNP Darlington transistor manufactured using planar base island technology with a monolithic Darlington configuration. It is suitable for output devices in complementary general-purpose amplifier applications.
Key electrical specifications include a maximum collector-emitter voltage (VCEO) of 80 Vdc and a maximum collector current (IC) of 4.0 Adc. The device offers a high DC current gain (hFE) of 750 (Min) at IC = 1.5 and 2.0 Adc. Total power dissipation (PD) is rated at 40W at 25°C, with a derating of 0.32 W/°C above 25°C.
This transistor operates within a junction temperature range of -55 to +150 °C. The thermal resistance from junction to case (RthJC) is 3.13 °C/W. The BD680A is packaged in a TO-126 case and is designed for through-hole mounting.
This series of transistors is complementary to the BD675, BD675A, BD677, BD677A, BD679, BD679A, and BD681 series. The BD678, BD678A, BD680, and BD680A are equivalent to the MJE 700, 701, 702, and 703 series.
| Qty | Low | High |
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| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the BD680A is 80 Vdc.
The maximum continuous collector current (IC) for the BD680A is 4.0 Adc.
The maximum power dissipation (PD) for the BD680A at 25°C is 40W.
The operating and storage junction temperature range for the BD680A is -55 to +150 °C.
The BD680A is supplied in a TO-126 package.
The BD680A is designed for through-hole mounting.
