| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
34,950 pcs
|
34950 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
999 pcs
|
999 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
999 pcs
|
999 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | |
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| Supplier Device Package | |
| Tape & Reel | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The STMicroelectronics BD679A is an NPN Darlington transistor designed for high-current switching and amplification. It features a collector-emitter voltage rating of 80 V, a continuous collector current of 4 A, and a power dissipation of 40 W. The Darlington configuration provides a high DC current gain, with a minimum hFE of 750 at 2 A collector current and 3 V collector-emitter voltage. The collector-emitter saturation voltage is typically 2.8 V at 2 A with a base current of 40 mA.
The transistor is housed in a through-hole SOT-32-3 package, which is also known as TO-225AA or TO-126-3. It has a junction temperature rating of up to 150 °C, making it suitable for moderate-power applications. The device is RoHS3 compliant (unverified) and has an MSL of 1 (unlimited).
This transistor is commonly used in general-purpose switching and amplification circuits where high gain is required. Its rugged construction and reasonable power handling make it suitable for a variety of industrial and consumer electronic designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.03 | $1.03 |
| 10+ | $0.47 | $0.47 |
| 100+ | $0.42 | $0.42 |
| 500+ | $0.32 | $0.32 |
| 1,000+ | $0.29 | $0.29 |
| 2,000+ | $0.27 | $0.27 |
| 4,000+ | $0.24 | $0.24 |
| 12,000+ | $0.22 | $0.22 |
| 24,000+ | $0.19 | $0.19 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage (V_CEO) is 80 V.
The maximum collector current (I_C) is 4 A.
The power dissipation (P_D) is 40 W.
The minimum DC current gain (hFE) is 750 at I_C=2 A, V_CE=3 V.
The transistor is available in a through-hole SOT-32-3 package, also known as TO-225AA or TO-126-3.
The maximum operating junction temperature is 150 °C.
The BD679A is listed as RoHS3 compliant, but this information is unverified and should be confirmed with the manufacturer.