BD678G The BD678G is a PNP Darlington power transistor from On Semiconductor, rated for 60V collector-emitter voltage and 4A collector current. It is housed in a TO-126 through-hole package and is RoHS compliant.
Mfr Part #:

BD678G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The BD678G is a PNP Darlington power transistor from On Semiconductor, rated for 60V collector-emitter voltage and 4A collector current. It is housed in a TO-126 through-hole package and is RoHS compliant.
Total Stock: 200 pcs

BD678G Available from 1 distributor

Authorised
Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
200 pcs
200 pcs On Request 1 On Request On Request On Request On Request On Request

BD678G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Base Current (IB)
Collector Current (Ic)
Collector-Base Voltage (VCB)
Collector-Emitter Voltage (VCEO)
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Derate above 25°C
Emitter-Base Voltage (VEB)
Medical Grade
Mounting Type
Operating Temperature
Operating Temperature Range
Power
Supplier Device Package
Tape & Reel
Thermal Resistance - Junction to Case
Total Device Dissipation (PD)
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

BD678G Description

Short technical summary and product information.

The BD678G is a plastic medium-power silicon PNP Darlington transistor from On Semiconductor, designed for use as an output device in complementary general-purpose amplifier applications. It features a maximum collector-emitter voltage (VCEO) of 60V and a continuous collector current (IC) rating of 4A.

 

This device offers a high DC current gain (hFE) of 750 minimum at 1.5A and 3V, and a maximum collector-emitter saturation voltage (VCE(sat)) of 2.5V at 1.5A and 30mA base current. The total device dissipation is 40W at a case temperature of 25°C, with a derating factor of 0.32 W/°C above 25°C. The operating junction temperature range is -55°C to 150°C.

 

The BD678G is packaged in a TO-225AA / TO-126-3 through-hole package, making it suitable for PCB mounting. It is Pb-Free and RoHS compliant, and is the complementary part to the BD677G NPN transistor.

BD678G Quick Information

Product Type: PNP Darlington Power Transistor
Canonical Name: BD678G PNP Darlington Power Transistor
Subcategory: Single Bipolar Junction Transistor

BD678G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-Free

BD678G Features

  • PNP Darlington transistor for medium-power applications.
  • Rated for 60V collector-emitter voltage.
  • Supports 4A continuous collector current.
  • High DC current gain of 750 minimum.
  • Housed in a TO-126 through-hole package.

BD678G Applications

  • Output devices in complementary amplifier circuits.
  • General-purpose medium-power switching applications.
  • Linear amplifier stages requiring high gain.
  • Power management in industrial control systems.

BD678G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage (VCEO) of the BD678G?

The maximum collector-emitter voltage (VCEO) is 60V.

What is the maximum collector current rating for the BD678G?

The maximum collector current (IC) is 4A.

What is the power dissipation of the BD678G?

The total device dissipation is 40W at a case temperature of 25°C, derating at 0.32 W/°C above 25°C.

What is the operating temperature range for the BD678G?

The operating and storage junction temperature range is -55°C to 150°C.

What package type does the BD678G use?

The BD678G is available in a TO-225AA / TO-126-3 through-hole package.

Is the BD678G RoHS compliant?

Yes, the BD678G is RoHS3 compliant and Pb-Free.

What is the DC current gain (hFE) of the BD678G?

The minimum DC current gain (hFE) is 750 at IC=1.5A and VCE=3V.

Home
Account

Categories