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BD678AS BD678AS is a PNP Darlington transistor from On Semiconductor. It features a 60V collector-emitter breakdown voltage, 4A collector current, and 14W power dissipation in a TO126-3 through-hole package.
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BD678AS

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
BD678AS is a PNP Darlington transistor from On Semiconductor. It features a 60V collector-emitter breakdown voltage, 4A collector current, and 14W power dissipation in a TO126-3 through-hole package.
✓ Total Stock: 411 pcs
$ Price Range: $0.45

BD678AS Available from 1 distributor

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✓ Non-Authorised
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411 pcs
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BD678AS Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Halogen Free
Industrial Grade
Medical Grade
Military Grade
Mounting Type
Operating Temperature
Power
SVHC Present
Storage Temperature
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
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BD678AS Description

Short technical summary and product information.

The BD678AS is a PNP Darlington bipolar junction transistor manufactured by On Semiconductor. It is designed for general-purpose switching and amplification applications requiring high current gain. The device offers a maximum collector-emitter breakdown voltage of 60V and can handle a continuous collector current of up to 4A. With a maximum power dissipation of 14W, it is suitable for medium-power circuits.

 

The transistor provides a minimum DC current gain (hFE) of 750 at 2A collector current and 3V collector-emitter voltage, ensuring efficient signal amplification. The maximum collector-emitter saturation voltage is 2.8V at a base current of 40mA and collector current of 2A. The device can operate at junction temperatures up to 150°C.

 

The BD678AS is housed in a TO-225AA / TO-126-3 through-hole package, making it easy to mount on printed circuit boards. It is RoHS compliant and has an MSL rating of 1 (unlimited). This part is a direct replacement for the Fairchild BD678AS and is now part of the ON Semiconductor portfolio.

BD678AS Quick Information

Product Type: Bipolar Transistor
Canonical Name: BD678AS PNP Darlington Transistor
Subcategory: Single Bipolar Junction Transistor

BD678AS Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): Vendor Undefined
REACH Status: REACH Unaffected
Lead Free: Yes

BD678AS Estimated Pricing

Qty Low High
666+ $0.45 $0.45

Estimated market price range - modelled values for guidance only, not live distributor offers.

BD678AS Features

  • PNP Darlington transistor for high gain.
  • 60V collector-emitter breakdown voltage.
  • 4A continuous collector current rating.
  • 14W maximum power dissipation.
  • Through-hole TO-126-3 package.

BD678AS Applications

  • Used in medium-power switching circuits.
  • Suitable for linear amplification stages.
  • Ideal for motor and relay drivers.
  • Applicable in power supply control loops.

BD678AS FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage of the BD678AS?

The maximum collector-emitter breakdown voltage (Vceo) is 60V.

What is the maximum collector current rating?

The maximum collector current (Ic) is 4A.

What package does the BD678AS come in?

The BD678AS is available in a TO-225AA / TO-126-3 through-hole package.

What is the operating temperature range?

The maximum junction operating temperature is 150°C.

Is the BD678AS RoHS compliant?

The BD678AS is marked as RoHS3 compliant, but this information is unverified.

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