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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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9,131 pcs
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9131 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Tape & Reel | |
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The BD677ASTU is an NPN Darlington bipolar junction transistor from On Semiconductor. It offers a maximum collector-emitter voltage of 60V and a continuous collector current of 4A. With a power dissipation rating of 40W, it is suitable for medium-power switching and amplification applications. The device provides a high DC current gain (minimum 750 at Ic=2A, Vce=3V) and a saturation voltage of 2.8V max at Ib=40mA, Ic=2A.
This transistor is housed in a through-hole TO-126-3 package (also available as TO-225AA). It supports a maximum junction temperature of 150°C. The through-hole mounting allows for easy integration in power circuit boards. The BD677ASTU is commonly used in power switching circuits, relay drivers, and other applications requiring high current gain and low drive current.
As a Darlington configuration, it combines two transistors to achieve high current gain, making it suitable for interfacing low-power control signals to high-current loads. The device is designed for general-purpose switching and linear amplification.
| Qty | Low | High |
|---|---|---|
| 1,920+ | $0.87 | $0.87 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage is 60V.
The maximum collector current is 4A.
The maximum power dissipation is 40W.
The BD677ASTU is available in through-hole TO-225AA and TO-126-3 packages, with the supplier device package being TO-126-3.
The maximum junction temperature is 150°C.
The minimum DC current gain (hFE) is 750 at Ic=2A and Vce=3V.
The device is marked as RoHS3 compliant, but this status is unverified.