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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,183 pcs
|
3183 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Supplier Device Package | |
| Tape & Reel | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The BD677AS is an NPN Darlington transistor manufactured by ON Semiconductor. It features a maximum collector-emitter voltage of 60V and a maximum collector current of 4A. The device offers a minimum DC current gain (hFE) of 750 at 2A collector current and 3V collector-emitter voltage. Maximum Vce saturation is 2.8V at 40mA base current and 2A collector current. Power dissipation is rated at 40W. The transistor is designed for through-hole mounting and is available in a TO-225AA / TO-126-3 package. The operating junction temperature range extends up to 150°C. This Darlington configuration provides high current gain, making it suitable for applications requiring high amplification or switching of moderate currents.
| Qty | Low | High |
|---|---|---|
| 2,000+ | $0.28 | $0.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
60V.
TO-225AA and TO-126-3 (through-hole).
150°C.
Yes, it is listed as RoHS3 Compliant (unverified).
Minimum 750 at 2A collector current and 3V collector-emitter voltage.
40W.
Through hole.