LM431ACZXA
On Semiconductor
The LM431ACZXA from On Semiconductor is an adjustable shunt voltage reference. It offers a wide output voltage range and is suitable for various power management applications.
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
60 pcs
|
60 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Mounting Type |
The BD676A is a plastic medium-power silicon PNP Darlington transistor designed for use as output devices in complementary general-purpose amplifier applications. This series offers high DC current gain, with a minimum hFE of 750 at IC = 1.5 and 2.0 Adc.
Key electrical specifications include a Collector-Emitter Voltage (VCEO) ranging from 45V for the BD676/BD676A up to 100V for the BD682. The maximum Collector Current (IC) is 4.0 Adc, and the maximum Base Current (IB) is 0.1 Adc. Total device dissipation (PD) is rated at 40W at a case temperature of 25°C, with a derating of 0.32W/°C above that temperature.
Thermal characteristics include a Junction-to-Case thermal resistance (RthJC) of 3.13 °C/W. The operating and storage junction temperature range (TJ, Tstg) is from -55°C to +150°C.
The transistor is housed in a TO-225AA package and is suitable for through-hole mounting. Pb-Free packages are available.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The Collector-Emitter Voltage (VCEO) ranges from 45V for the BD676/BD676A up to 100V for the BD682.
The maximum continuous Collector Current (IC) is 4.0 Adc.
The total device dissipation (PD) is 40W at a case temperature of 25°C.
The operating and storage junction temperature range is -55°C to +150°C.
The BD676A is available in the TO-225AA package.
