BD676A The BD676A is a PNP Darlington power transistor from onsemi, rated for 45V VCEO and 4A collector current. Housed in a TO-126 through-hole package, it offers a minimum DC current gain of 750.
Mfr Part #:

BD676A

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The BD676A is a PNP Darlington power transistor from onsemi, rated for 45V VCEO and 4A collector current. Housed in a TO-126 through-hole package, it offers a minimum DC current gain of 750.
Total Stock: 10 pcs
$ Price Range: $0.28

BD676A Available from 1 distributor

Authorised
Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
10 pcs
10 pcs On Request 1 On Request On Request On Request On Request On Request

BD676A Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Base Current (DC)
Collector Cutoff Current (ICBO)
Collector Cutoff Current (ICEO)
Collector-Base Voltage (VCB)
Collector-Emitter Voltage (VCEO)
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Emitter Cutoff Current (Iebo)
Emitter-Base Voltage (VEB)
Mounting Type
Operating Temperature
Power
Storage Temperature Range
Supplier Device Package
Tape & Reel
Thermal Resistance - Junction to Case
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

BD676A Description

Short technical summary and product information.

The BD676A from onsemi is a plastic medium-power silicon PNP Darlington transistor. It is rated for a collector-emitter voltage of 45V and a continuous collector current of 4A, making it suitable for output stages in complementary general-purpose amplifier applications.

 

The device features a minimum DC current gain of 750 at 2A collector current and a maximum collector-emitter saturation voltage of 2.8V at 2A. Maximum power dissipation is 40W at a case temperature of 25°C, with a junction-to-case thermal resistance of 3.13°C/W.

 

The BD676A is packaged in a TO-225AA / TO-126-3 through-hole package (supplier device package TO-126). It operates over a junction temperature range of -55°C to +150°C. The device is Pb-Free and RoHS compliant.

BD676A Quick Information

Product Type: PNP Darlington Transistor
Series: BD676A
Canonical Name: Silicon PNP Darlington Power Transistor
Subcategory: PNP Darlington Power Transistor

BD676A Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

BD676A Estimated Pricing

Qty Low High
2,000+ $0.28 $0.28

Estimated market price range - modelled values for guidance only, not live distributor offers.

BD676A Features

  • PNP Darlington with 45V VCEO rating.
  • Collector current rating up to 4A.
  • Minimum DC current gain of 750.
  • Rated for 40W power dissipation.
  • Through-hole TO-126 package.

BD676A Applications

  • Complementary amplifier output stage driver.
  • Medium-power switching and amplification circuits.
  • Darlington pair for high-gain current applications.
  • Output devices for general-purpose power amplifiers.

BD676A FAQs

7 frequently asked questions generated from this part’s specifications.
What is the collector-emitter voltage rating of the BD676A?

The BD676A has a minimum collector-emitter voltage (VCEO) rating of 45V.

What is the maximum collector current of the BD676A?

The maximum collector current is 4A DC.

What package is the BD676A available in?

The BD676A uses a TO-225AA / TO-126-3 through-hole package, with the supplier device package listed as TO-126.

What is the operating temperature range of the BD676A?

The operating junction temperature range is -55°C to +150°C.

Is the BD676A RoHS compliant?

Yes, the BD676A is RoHS3 compliant and Pb-Free per the onsemi datasheet.

What is the DC current gain (hFE) of the BD676A?

The minimum DC current gain is 750 at Ic=2A and Vce=3V.

What is the maximum power dissipation of the BD676A?

The maximum power dissipation is 40W at a case temperature of 25°C.

Home
Account

Categories