BD676 PNP Darlington power transistor, 45V collector-emitter voltage, 4A collector current, 40W power dissipation. Through-hole package TO-126.
Mfr Part #:

BD676

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
PNP Darlington power transistor, 45V collector-emitter voltage, 4A collector current, 40W power dissipation. Through-hole package TO-126.
Total Stock: 7,438 pcs
$ Price Range: $0.28

BD676 Available from 1 distributor

Authorised
Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
7,438 pcs
7438 pcs On Request 1 On Request On Request 0432+ On Request On Request

BD676 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Base Current (IB)
Collector Cutoff Current (ICBO)
Collector Cutoff Current (ICEO)
Collector-Base Voltage (VCB)
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Emitter Cutoff Current (Iebo)
Emitter-Base Voltage (VEB)
Medical Grade
Mounting Type
Operating Temperature
Power
Supplier Device Package
Tape & Reel
Thermal Resistance Junction-to-Case (RθJC)
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

BD676 Description

Short technical summary and product information.

The BD676 is a PNP Darlington power transistor from onsemi designed for medium-power general-purpose amplifier applications. It features a collector-emitter voltage (VCEO) of 45V and a collector current (IC) of 4A, with a maximum power dissipation of 40W at case temperature 25°C. The device offers high DC current gain (hFE) of 750 minimum at 1.5A and 3V, making it suitable for driving loads with low base current.

 

The transistor is packaged in a TO-225AA/TO-126-3 through-hole package, with a junction-to-case thermal resistance of 3.13°C/W. It operates over a junction temperature range of -55°C to 150°C. The BD676 is complementary to the BD675 NPN transistor, allowing use in push-pull configurations.

 

This device is Pb-free and RoHS compliant, with a moisture sensitivity level (MSL) of 1 (unlimited). It is suitable for use in audio amplifiers, solenoid drivers, and general switching applications.

BD676 Quick Information

Product Type: PNP Darlington Power Transistor
Series: BD676
Canonical Name: On Semiconductor BD676 PNP Darlington Power Transistor, 45V VCEO, 4A IC, TO-126
Subcategory: Darlington Transistor

BD676 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected
Lead Free: Yes

BD676 Estimated Pricing

Qty Low High
2,000+ $0.28 $0.28

Estimated market price range - modelled values for guidance only, not live distributor offers.

BD676 Features

  • PNP Darlington transistor with high DC current gain.
  • Maximum collector-emitter voltage of 45V.
  • Sustains collector current up to 4A.
  • Power dissipation of 40W at case temperature 25°C.
  • Through-hole package TO-126 for easy mounting.

BD676 Applications

  • Output device in complementary general-purpose amplifiers.
  • Suitable for solenoid and relay driver circuits.
  • Used in power switching applications up to 4A.
  • Ideal for audio amplifier stages requiring high gain.

BD676 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the collector-emitter voltage rating of the BD676?

45V (VCEO).

What is the package type of the BD676?

TO-225AA, TO-126-3 (through-hole).

What is the operating temperature range of the BD676?

-55°C to 150°C (junction).

Is the BD676 RoHS compliant?

Yes, according to the datasheet it is Pb-free and RoHS compliant.

What is the DC current gain of the BD676?

Minimum hFE of 750 at 1.5A, 3V.

Home
Account

Categories