| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
855 pcs
|
855 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | |
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| Supplier Device Package | |
| Tape & Reel | |
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| Voltage |
The BD675AS is an NPN Darlington transistor manufactured by On Semiconductor. It is designed for general-purpose switching and amplification applications requiring high current gain. The Darlington configuration provides a minimum DC current gain (hFE) of 750 at Ic=2A, Vce=3V.
Key electrical ratings include a collector-emitter voltage (Vceo) of 45V, a continuous collector current (Ic) of 4A, and a maximum power dissipation of 40W. The collector-emitter saturation voltage (Vce(sat)) is typically 2.8V at Ib=40mA, Ic=2A. The device can operate at a junction temperature up to 150°C.
The transistor is housed in a TO-225AA / TO-126-3 through-hole package, suitable for PCB mounting. It is RoHS3 compliant and has a moisture sensitivity level of 1 (unlimited). The BD675AS is a reliable choice for medium-power switching and linear applications.
| Qty | Low | High |
|---|---|---|
| 855+ | $0.47 | $0.47 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The BD675AS has a collector-emitter voltage (Vceo) of 45V.
The BD675AS is available in a TO-225AA / TO-126-3 through-hole package.
The maximum junction temperature is 150°C.
Yes, the BD675AS is RoHS3 compliant.
The minimum DC current gain (hFE) is 750 at Ic=2A, Vce=3V.
The maximum collector-emitter saturation voltage is 2.8V at Ib=40mA, Ic=2A.