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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
15 pcs
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15 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Base Current (IB) | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Emitter-Base Voltage (VEBO) | |
| Junction to Case Thermal Resistance | |
| Medical Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The BD675A is a silicon NPN Darlington power transistor from onsemi designed for medium-power general-purpose amplifier applications. It features a collector-emitter voltage (VCEO) of 45V and a continuous collector current rating of 4A, with a power dissipation of 40W at a case temperature of 25°C.
This device offers a high DC current gain (hFE) of 750 minimum at 2A collector current and 3V VCE, making it suitable for driver stages and output stages in complementary amplifier designs. The Darlington configuration provides high current gain with a single base drive.
The BD675A is packaged in a TO-225AA / TO-126-3 through-hole package, with a junction-to-case thermal resistance of 3.13°C/W. It is designed for an operating junction temperature range of -55°C to 150°C. The part is Pb-Free and RoHS compliant.
| Qty | Low | High |
|---|---|---|
| 2,000+ | $0.28 | $0.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage (VCEO) is 45V.
The maximum continuous collector current is 4A.
The power dissipation is 40W at a case temperature of 25°C.
The BD675A is available in a TO-225AA / TO-126-3 through-hole package, with a supplier device package of TO-126.
The operating junction temperature range is -55°C to 150°C.
Yes, the datasheet states the device is Pb-Free and RoHS Compliant.