| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
22 pcs
|
22 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Industrial Grade | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| Storage Temperature | |
| Tape & Reel |
The BD650 from NXP Semiconductors is a PNP Silicon Power Darlington Transistor. It is designed for complementary use with other devices in the BD645, BD647, BD649, and BD651 series, making it versatile for various circuit designs.
Key electrical characteristics include a maximum collector-emitter voltage (VCEO) of -100V and a continuous collector current (IC) of -8A. The transistor boasts a high minimum hFE of 750 at 3V and 3A, indicating significant current gain. It can handle a continuous device dissipation (Ptot) of up to 62.5W at a 25°C case temperature, with a derating to 150°C.
Packaged in a standard TO-220 configuration, the BD650 is suitable for through-hole mounting. The operating junction and storage temperature range is from -65°C to +150°C. This device is well-suited for power switching and amplification applications where robust performance and complementary operation are required.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.77 | $0.77 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the BD650 is -100V when the base current is 0.
The BD650 has a continuous collector current rating of -8A.
The maximum continuous device dissipation (Ptot) for the BD650 at 25°C case temperature is 62.5W.
The BD650 is supplied in a TO-220 package.
The operating junction temperature range for the BD650 is -65°C to +150°C.
The minimum hFE for the BD650 at 3V and 3A is 750.
