ULN2003APG
Toshiba
The Toshiba ULN2003APG is a 7-channel Darlington array with open collector outputs. It is designed for TTL and CMOS 5V input compatibility.
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
94 pcs
|
94 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Industrial Grade | |
| Lead Spacing | |
| Lead Style | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| SVHC Present | |
| Storage Temperature | |
| Tape & Reel |
The BD646 from SEMELAB is a PNP Silicon Power Darlington Transistor. It is designed for complementary use with other SEMELAB devices like the BD645, BD647, BD649, and BD651. This transistor features a continuous collector current rating of 8A and a peak collector current of 12A.
With a continuous device dissipation of 62.5W at 25°C case temperature, the BD646 is suitable for power applications. It also has a minimum hFE of 750 at 3V and 3A, indicating significant current gain. The operating junction temperature range is from -65°C to +150°C.
The BD646 comes in a TO-220 package, which is a common through-hole mounting type. This package allows for efficient heat dissipation, crucial for power transistors. The lead temperature for soldering is rated up to 260°C for 10 seconds.
Key electrical characteristics include a collector-emitter breakdown voltage of -60V and a collector-emitter cut-off current of -0.5mA at -30V. The emitter-base voltage is rated at -5V maximum. This device is designed for applications requiring high current gain and power handling capabilities.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.85 | $0.85 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The continuous collector current for the BD646 is -8A.
The maximum power dissipation of the BD646 at 25°C case temperature is 62.5W.
The minimum hFE for the BD646 at VCE = -3V and IC = -3A is 750.
The BD646 transistor comes in a TO-220 package.
The RoHS status of the BD646 is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the BD646 is 1 Unlimited.
The REACH status for the BD646 is REACH Unaffected.