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5 pcs
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5 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BD537 from HAR is a power bipolar junction transistor (BJT) with an NPN silicon construction. It is designed to provide exceptional high gain performance coupled with very low saturation voltage.
Key electrical specifications include a collector-base voltage of 80V, an emitter-base voltage of 5V, and a maximum collector current rating of 8A. The transistor exhibits a maximum power dissipation of 50W and a collector emitter saturation voltage of 800mV. Its gain bandwidth product is 12MHz.
This component is housed in a TO-220AB package, suitable for through-hole mounting. The operating temperature range spans from -65°C to 150°C. The BD537 is a 1-element transistor made of silicon, categorized as a power bipolar transistor.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.77 | $0.77 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-base voltage for the BD537 is 80V.
The BD537 transistor has a maximum collector current rating of 8A.
The maximum power dissipation for the BD537 is 50W.
The BD537 operates within a temperature range of -65°C to 150°C.
The BD537 is supplied in a TO-220AB package.