BD537 NPN bipolar junction transistor with 80V collector-emitter voltage and 8A collector current. Housed in a TO-220 through-hole package.
Mfr Part #:

BD537

Available from 1 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
NPN bipolar junction transistor with 80V collector-emitter voltage and 8A collector current. Housed in a TO-220 through-hole package.
Total Stock: 107 pcs
$ Price Range: $0.60

BD537 Available from 1 distributor

Authorised
Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
107 pcs
107 pcs On Request 1 On Request On Request On Request On Request On Request

BD537 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Base Current (IB)
Base-Emitter Voltage (VBE)
Collector Cut-Off Current (ICES)
Collector Cut-off Current (ICBO)
Collector-Base Voltage (VCBO)
Collector-Emitter Sustaining Voltage (VCEO(sus))
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Emitter Cut-off Current (IEBO)
Emitter-Base Voltage (VEBO)
Lead Style
Mounting Type
Operating Temperature
Packaging Type
Power
Storage Temperature Range
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

BD537 Description

Short technical summary and product information.

The BD537 is an NPN power transistor manufactured by STMicroelectronics using Planar technology with Base Island layout. It is designed for general-purpose switching and amplification applications requiring high gain and low saturation voltage. Key electrical characteristics include a collector-emitter voltage (VCEO) of 80V, collector current (IC) of 8A, and power dissipation of 50W. The transistor offers a DC current gain (hFE) of 15 minimum at 2A collector current and 2V VCE, and a collector-emitter saturation voltage of 800mV maximum at 6A collector current and 600mA base current. The device is housed in a TO-220-3 through-hole package, suitable for heatsink mounting. The operating junction temperature range is up to 150°C, with storage temperature from -65°C to 150°C. This transistor is commonly used in power supply circuits, motor control, and audio amplifier output stages.

BD537 Quick Information

Product Type: Bipolar (BJT) Transistor - Single
Series: BD537
Canonical Name: BD537 NPN Power Transistor
Subcategory: Single NPN

BD537 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected

BD537 Estimated Pricing

Qty Low High
1,250+ $0.60 $0.60

Estimated market price range - modelled values for guidance only, not live distributor offers.

BD537 Features

  • NPN power transistor with 80V VCEO rating.
  • Collector current capability up to 8A.
  • Power dissipation of 50W maximum.
  • Low saturation voltage of 800mV at 6A.
  • TO-220 through-hole package for easy mounting.

BD537 Applications

  • Used in power supply regulation circuits.
  • Suitable for motor driver output stages.
  • Ideal for audio amplifier output stages.
  • Employed in general-purpose switching applications.

BD537 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the collector-emitter voltage rating of the BD537?

80V (VCEO).

What package does the BD537 come in?

TO-220-3 (through-hole).

What is the operating junction temperature range?

Maximum junction temperature is 150°C.

Is the BD537 RoHS compliant?

RoHS3 compliant (unverified).

What is the collector current rating?

8A.

What is the DC current gain (hFE)?

Minimum 15 at 2A collector current and 2V VCE.

What is the saturation voltage?

Maximum 800mV at 6A collector current and 600mA base current.

Home
Account

Categories