BD535 The BD535 is an NPN bipolar power transistor from STMicroelectronics, rated for 60V collector-emitter voltage and 8A collector current. Housed in a TO-220 package, it offers 50W power dissipation.
Mfr Part #:

BD535

Available from 2 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
The BD535 is an NPN bipolar power transistor from STMicroelectronics, rated for 60V collector-emitter voltage and 8A collector current. Housed in a TO-220 package, it offers 50W power dissipation.
Total Stock: 4,238 pcs
$ Price Range: $0.30 - $0.43

BD535 Available from 2 distributors

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Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
4,180 pcs
4180 pcs On Request 1 On Request On Request 10+ On Request On Request
Non-Authorised Inventory information
58 pcs
58 pcs On Request 1 On Request On Request On Request On Request On Request

BD535 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Base-Emitter Voltage (Vbe) (Typ) @ Ic, Vce
Collector Cut-off Current (ICBO) (Max)
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Emitter Cut-off Current (IEBO) (Max)
Mounting Type
Operating Temperature
Power
Storage Temperature
Storage Temperature Range
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

BD535 Description

Short technical summary and product information.

The BD535 is a complementary NPN power transistor manufactured by STMicroelectronics using Planar technology with 'Base Island' layout. It is designed for medium power linear and switching applications, offering high gain performance and low saturation voltage.

 

Key electrical specifications include a collector-emitter voltage (VCEO) of 60V, collector current (IC) of 8A, and a total power dissipation of 50W at case temperature 25°C. The DC current gain (hFE) is a minimum of 25 at IC=2A and VCE=2V, with a collector-emitter saturation voltage (VCE(sat)) of 0.8V maximum at IC=6A and IB=600mA. The device also features a maximum operating junction temperature of 150°C and storage temperature range of -65°C to 150°C.

 

The transistor is housed in a standard TO-220-3 through-hole package, supplied in tubes. The robust design makes it suitable for use in power supply circuits, motor control, and general purpose switching applications. The BD535 is the NPN complement to the PNP BD536, enabling push-pull configurations.

 

For design engineers, the BD535 offers reliable performance with its high current capability and low saturation voltage. The device is listed as RoHS3 compliant, MSL 1, and REACH unaffected, though these compliance claims are unverified and should be confirmed from official sources.

BD535 Quick Information

Product Type: Bipolar Junction Transistor (BJT) - Single NPN
Series: BD535
Canonical Name: STMicroelectronics BD535 NPN Power Transistor
Subcategory: NPN Power Transistor

BD535 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected

BD535 Estimated Pricing

Qty Low High
1+ $0.43 $0.43
10+ $0.38 $0.38
100+ $0.30 $0.30

Estimated market price range - modelled values for guidance only, not live distributor offers.

BD535 Features

  • NPN power transistor with 60V VCEO.
  • 8A collector current capability.
  • 50W power dissipation at 25°C case.
  • Low saturation voltage of 0.8V max.
  • TO-220 through-hole package.

BD535 Applications

  • Used in power supply switching circuits.
  • Suitable for motor control applications.
  • Ideal for general purpose amplification.
  • Can be used in push-pull configurations with BD536.

BD535 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the collector-emitter voltage rating of the BD535?

The collector-emitter voltage (VCEO) is 60V.

What is the maximum collector current?

The maximum collector current (IC) is 8A.

What is the power dissipation of the BD535?

The total power dissipation (Ptot) is 50W at case temperature 25°C.

What is the package type of the BD535?

The BD535 is housed in a TO-220-3 through-hole package.

What is the operating junction temperature range?

The maximum operating junction temperature (Tj) is 150°C. The storage temperature range is -65°C to 150°C.

What is the DC current gain (hFE) of the BD535?

The minimum DC current gain (hFE) is 25 at IC=2A, VCE=2V.

Is the BD535 RoHS compliant?

The BD535 is listed as RoHS3 compliant, but this status is unverified and should be confirmed from official documentation.

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