| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2 pcs
|
2 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Lead Spacing | |
| Medical Grade | |
| Mounting Type | |
| Operating Temperature | |
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| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
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| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The BD442 is a PNP power transistor manufactured by On Semiconductor, designed for linear and switching industrial equipment. It offers a collector-emitter breakdown voltage of 80V, continuous collector current of 4A, and peak collector current of 7A. Power dissipation is 36W at case temperature 25°C. The transistor features a DC current gain (hFE) of 40 minimum at 500mA, 1V, and a typical gain of 140 at the same condition. Vce saturation is 0.8V maximum at 2A collector current and 0.2A base current. The device is available in a TO-126 through-hole package (also referred to as TO-225AA or SOT-32) and is supplied in tube packaging. The operating junction temperature range is -55°C to 150°C. This transistor is suitable for applications requiring medium power amplification and switching.
| Qty | Low | High |
|---|---|---|
| 1,397+ | $0.21 | $0.21 |
| 2,000+ | $0.28 | $0.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter breakdown voltage (Vceo) is 80V.
The maximum continuous collector current is 4A, with a peak current of 7A.
The BD442 is available in a TO-126 through-hole package, also known as TO-225AA or SOT-32.
The operating junction temperature range is -55°C to 150°C.
RoHS status is conflicting: Mouser reports RoHS3 compliant, while DigiKey reports non-compliant. Verification with the manufacturer is recommended.
The minimum hFE is 40 at Ic=500mA, Vce=1V, with typical gain of 140 at the same condition.
The collector-emitter saturation voltage (Vce(sat)) is 0.8V maximum at Ic=2A, Ib=0.2A.